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Stability of the structure of dielectric films on silicon

โœ Scribed by L.N. Aleksandrov; F.L. Edelman


Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
378 KB
Volume
66
Category
Article
ISSN
0040-6090

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Layers of yttria-stabilized zirconia with different yttria content were prepared using MOCVD. The variation of the crystallographic parameters of the cell, as well as the residual stress of the deposits have been studied by XRD as a function of yttria content. The maximum value of the stress has bee