Thin BaTiO 3 films were deposited on thin TiN film covered Si wafers by ion beam assisted deposition comprising of two electron beam evaporators for evaporating Ti and BaCO 3 and an electron cyclotron resonance ion source for ionizing O 2 . Films deposited using 25 eV oxygen ion beams had many small
Effects of deposition temperature on the structure and thermal stability of a-C:F films with low dielectric constant
β Scribed by Zhaoyuan Ning; Shanhua Cheng; Lingling Chen
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 221 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1369-8001
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