Structural Properties of Yttria-Stabilized Zirconia Films Grown on Silicon (001) Using MOCVD

✍ Scribed by Dr. Gemma Garcia; Dr. Juan Casado; Joan Llibre; Dr. Joan Cifre; Dr. Albert Figueras; Prof. Salvador Galí; Josep Bassas

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 542 KB
• Volume: 3
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.19970030207

✦ Synopsis

Layers of yttria-stabilized zirconia with different yttria content were prepared using MOCVD. The variation of the crystallographic parameters of the cell, as well as the residual stress of the deposits have been studied by XRD as a function of yttria content. The maximum value of the stress has been correlated with a deformation of the cell, in the cubic domain, due to an intrinsic structural modification of the crystals.