✦ LIBER ✦

Spontaneous one-dimensional lateral alignment of multistacked InGaAs quantum dots on GaAs (n 1 1)B substrates

✍ Scribed by Jeong-Sik Lee; Mitsuru Sugisaki; Hong-Wen Ren; Shigeo Sugou; Yasuaki Masumoto

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 386 KB
Volume: 7
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(99)00330-6

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✦ Synopsis

In0:45Ga0:55As=GaAs multistacking quantum dot (QD) structures were fabricated on a GaAs (n 1 1)B (n = 2-4) substrate by metalorganic vapor-phase epitaxy. QDs spontaneously aligned in the [0 1 1] direction were observed on stacked QDs, whereas QDs were randomly distributed in the initial In0:45Ga0:55As layer growth. The formation mechanism of this self-alignment was studied by changing the number of In0:45Ga0:55As=GaAs multilayers and crystallographic arrangement. Photoluminescence spectra showing clear polarization dependence indicate carrier coupling in the QD arrays. This growth technique results in spontaneously aligned InGaAs QDs without any preprocessing technique prior to growth.

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Spontaneous one-dimensional lateral alignment of multistacked InGaAs quantum dots on GaAs (n&#xa0;1&#xa0;1)B substrates

✦ Synopsis

Spontaneous one-dimensional lateral alignment of multistacked InGaAs quantum dots on GaAs (n 1 1)B substrates