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Spontaneous emission of highly excited GaAs/(Ga,Al)As quantum wells

✍ Scribed by G. Bongiovanni; JL. Staehli


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
527 KB
Volume
84
Category
Article
ISSN
0038-1098

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Localization in highly strained In0.35Ga
✍ J. Martinez-Pastor; F. AgullΓ³-Rueda; A. Vinattieri; F. Meseguer; J. SΓ‘nchez-Dehe πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 358 KB

We have studied different strained InGaAs/GaAs ultrathin quantum wells grown on vicinal surfaces for various terrace lengths and In contents. From photoluminescence experiments we observe an enhancement of the continuum density of states of quantum wells with large In content ( \(x=0.35\) ). We asso