Spiral inductors on silicon—status and trends (invited article)
✍ Scribed by Joachim N. Burghartz
- Book ID
- 101272015
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 319 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1096-4290
No coin nor oath required. For personal study only.
✦ Synopsis
The status of the integration, the modeling, and the layout of spiral inductors on silicon substrates for rf circuits are reviewed. A summary of the current research activity in this field is presented. The possible inductor implementations are categorized either as conservative, following the silicon main stream, or as innovative approaches. It is concluded that the spiral inductor on silicon is a feasible device and finds extensive use in the design of future silicon-based rf circuits.
📜 SIMILAR VOLUMES
## Abstract We present physics‐based modeling for silicon on‐chip spiral inductors, taking into account the coupling capacitance between metal spirals. The coupling capacitance __C__~__p__~ is calculated using a distributed‐capacitance model based on finite‐element analysis. As demonstrated for a s
Spiral inductors ha¨e been e¨aluated on Si substrates by inserting a porous Si layer for the application of MMICs. This high-resis-ti¨e porous Si layer pro¨ides a low substrate loss and a low coupling effect. Spiral inductors fabricated on this layer achie¨e better Q-and inductance ¨alues. A 9.7 nH