✦ LIBER ✦

Scalable distributed-capacitance model for silicon on-chip spiral inductors

✍ Scribed by Fengyi Huang; Jingxue Lu; Nan Jiang

Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 184 KB
Volume: 48
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.21642

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✦ Synopsis

Abstract

We present physics‐based modeling for silicon on‐chip spiral inductors, taking into account the coupling capacitance between metal spirals. The coupling capacitance C~p~ is calculated using a distributed‐capacitance model based on finite‐element analysis. As demonstrated for a series of inductors with the number of turns ranging from 2.5 to 6.5 fabricated in a 0.18‐μm CMOS technology, the current model provides simulation results for the quality factor Q, the S‐parameter, and the self‐resonance frequency f~SR~ that are in good agreement with the measurements without any fitting parameters. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1423–1427, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21642

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