✦ LIBER ✦

Spinodal decomposition and coarsening of stressed thin films on compliant substrates

✍ Scribed by P.H Leo; W.C Johnson

Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 309 KB
Volume: 49
Category: Article
ISSN: 1359-6454
DOI: 10.1016/s1359-6454(01)00084-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of substrate constraint on spinod

Effect of substrate constraint on spinodal decomposition in an elastically inhomogeneous thin film

✍ D. J. Seol; S. Y. Hu; K. H. Oh; L. Q. Chen 📂 Article 📅 2004 🏛 TechnoPress 🌐 English ⚖ 773 KB

Tensile testing of thin films supported

Tensile testing of thin films supported on compliant substrates

✍ Xu Chen; Bradley L. Kirsch; Robert Senter; Sarah H. Tolbert; Vijay Gupta 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 452 KB

On spinodal decomposition in magnetron-s

On spinodal decomposition in magnetron-sputtered (Ti,Zr) nitride and carbide thin films

✍ O. Knotek; A. Barimani 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 295 KB

Heteroepitaxy on compliant substrates: r

Heteroepitaxy on compliant substrates: relaxation of misfit stress at low critical film thickness

✍ Kästner, G. 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 91 KB

Mechanics of shaft-loaded blister test f

Mechanics of shaft-loaded blister test for thin film suspended on compliant substrate

✍ MingHao Zhao; WeiLing Zheng; CuiYing Fan 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 732 KB

Based on the von Kármán plate theory, the mechanics of a shaft-loaded blister test for thin film/substrate systems is studied by considering elastic substrate deformations and residual stresses in these films. In testing, films are attached to a substrate provided with a circular hole, through which

Investigation of strain-relaxed SiGe thi

Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate

✍ Changchun Chen; Benhai Yu; Jiangfeng Liu; Jianqing Cao; Dezhang Zhu; Zhihong Liu 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 347 KB

Si 1Àx Ge x thin films on the Ar + ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 • 10 15 cm À2 ) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to cha