𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Spin relaxation of conduction electrons in highly doped semiconductors (InSb, Si, Ge)

✍ Scribed by E. M. Gershenzon; N. M. Pevin; M. S. Fogelson

Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
596 KB
Volume
49
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Spin relaxation of electrons excited in
Spin relaxation of electrons excited in p-doped semiconductor heterostructures
✍ M.Z. Maialle; M.H. Degani πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 115 KB

We present a calculation of the spin-relaxation time of photoexcited electrons in p-doped quantum wells of GaAs with the spin-flip mechanism due to the electron-hole exchange interaction. We have observed shorter spin-relaxation times for electrons close to the conduction-band edge when including th

The electronic effect of Ti4+, Zr4+ and
The electronic effect of Ti4+, Zr4+ and Ge4+ dopings upon the physical properties of In2O3 and Sn-doped In2O3 ceramics: application to new highly-transparent conductive electrodes
✍ G. Campet; S.D. Han; S.J. Wen; J.P. Manaud; J. Portier; Y. Xu; J. Salardenne πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 420 KB

The electronic properties of In203 (IO) and Sn-doped In203 (ITO) ceramics doped with Ti 4Γ·, Zr 4Γ· or Ge 4Γ· are investigated. The choice of the doping elements arises from their high value of the "Lewis acid strength". Related to that, it has been shown that the doping of IO or ITO ceramics with Zr 4