Spin relaxation of electrons excited in p-doped semiconductor heterostructures

✍ Scribed by M.Z. Maialle; M.H. Degani

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 115 KB
• Volume: 24
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0289

✦ Synopsis

We present a calculation of the spin-relaxation time of photoexcited electrons in p-doped quantum wells of GaAs with the spin-flip mechanism due to the electron-hole exchange interaction. We have observed shorter spin-relaxation times for electrons close to the conduction-band edge when including the spin mixing of the valence-hole states. This spin mixing allows exchange spin-relaxation channels which are energy forbidden in the case of pure-spin holes.