## Abstract The photoluminescence properties of silicon quantum dots may be tailored by surface states via efficient coupling to resonant bulk states. Therefore various wetβchemistry procedures were developed to fabricate silicon quantum dots with adjustable sizes and surface properties. While the
Spin relaxation in isotopically purified silicon quantum dots
β Scribed by M. Prada; R.H. Blick; R. Joynt
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 243 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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β¦ Synopsis
We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two-dimensional heterostructures. We find that the spin-flip rate is very sensitive to these coupling constants. We investigate the nuclei-mediated spin-flip process and find the level of 29 Si concentration for which this mechanism becomes dominant.
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We show that the number of electrons confined in a semiconductor quantum dot has a strong influence over the Rashba and Dresselhaus spin-orbit (SO) admixture. This can be exploited to improve the lifetime of spin excitations, as compared to the usual oneand two-electron devices. The physical mechani
A review of our recent experiments on the studies of spin-lattice relaxation in diluted magnetic semiconductor quantum wells (undoped (Cd,Mn)Te/(Cd,Mg)Te; n-doped (Cd,Mn)Te/(Cd,Mg)Te and p-doped (Cd,Mn)Te/(Cd,Mg,Zn)Te) and (Cd,Mn)Se/ZnSe quantum dots is given. An optical detection of the nonequilibr