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Parametric properties of the electron spin relaxation in InAs quantum dots

✍ Scribed by Hongliang Jiang; Duanzheng Yao; Shaohua Gong; Xiaobo Feng

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
453 KB
Volume
38
Category
Article
ISSN
0026-2692

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We show that the number of electrons confined in a semiconductor quantum dot has a strong influence over the Rashba and Dresselhaus spin-orbit (SO) admixture. This can be exploited to improve the lifetime of spin excitations, as compared to the usual oneand two-electron devices. The physical mechani