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Spin relaxation due to spin–orbit coupling in multi-electron quantum dots

✍ Scribed by J.I. Climente; A. Bertoni; G. Goldoni; M. Rontani; E. Molinari

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
148 KB
Volume
40
Category
Article
ISSN
1386-9477

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✦ Synopsis

We show that the number of electrons confined in a semiconductor quantum dot has a strong influence over the Rashba and Dresselhaus spin-orbit (SO) admixture. This can be exploited to improve the lifetime of spin excitations, as compared to the usual oneand two-electron devices. The physical mechanisms reducing SO admixture are discussed, and numerical results for realistic weakly confined GaAs/AlGaAs dots are reported.

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A virtual intersubband spin–flip spin–or
A virtual intersubband spin–flip spin–orbit coupling induced spin relaxation in GaAs (110) quantum wells
✍ Y. Zhou; M.W. Wu 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 964 KB

A spin relaxation mechanism is proposed based on a second-order spin-flip intersubband spin-orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is shown that this mechanism is important in symmetric GaAs (110