We show that the number of electrons confined in a semiconductor quantum dot has a strong influence over the Rashba and Dresselhaus spin-orbit (SO) admixture. This can be exploited to improve the lifetime of spin excitations, as compared to the usual oneand two-electron devices. The physical mechani
✦ LIBER ✦
A virtual intersubband spin–flip spin–orbit coupling induced spin relaxation in GaAs (110) quantum wells
✍ Scribed by Y. Zhou; M.W. Wu
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 964 KB
- Volume
- 149
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
✦ Synopsis
A spin relaxation mechanism is proposed based on a second-order spin-flip intersubband spin-orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is shown that this mechanism is important in symmetric GaAs (110) quantum wells with high impurity density. The dependencies of the spin relaxation time on electron density, temperature and well width are studied with the underlying physics analyzed.
📜 SIMILAR VOLUMES
Spin relaxation due to spin–orbit coupli
✍
J.I. Climente; A. Bertoni; G. Goldoni; M. Rontani; E. Molinari
📂
Article
📅
2008
🏛
Elsevier Science
🌐
English
⚖ 148 KB
Ultrafast exciton spin relaxation in GaA
✍
Y. Takagi; S. Adachi; S. Takeyama; A. Tackeuchi; S. Muto; J.J. Dubowski
📂
Article
📅
1994
🏛
Elsevier Science
🌐
English
⚖ 329 KB
Temperature dependence of spin relaxatio
✍
V.A. Chitta; M. Potemski; J.C. Maan; A. Fasolino; K. Ploog; G. Weimann
📂
Article
📅
1991
🏛
Elsevier Science
🌐
English
⚖ 358 KB