Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells
β Scribed by Zhou, Y.; Wu, M. W.
- Book ID
- 125492128
- Publisher
- EDP Sciences
- Year
- 2010
- Tongue
- English
- Weight
- 221 KB
- Volume
- 89
- Category
- Article
- ISSN
- 0295-5075
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π SIMILAR VOLUMES
A spin relaxation mechanism is proposed based on a second-order spin-flip intersubband spin-orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is shown that this mechanism is important in symmetric GaAs (110
We show that the number of electrons confined in a semiconductor quantum dot has a strong influence over the Rashba and Dresselhaus spin-orbit (SO) admixture. This can be exploited to improve the lifetime of spin excitations, as compared to the usual oneand two-electron devices. The physical mechani