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Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques

✍ Scribed by E. Gaubas; A. Uleckas; R. Grigonis; V. Sirutkaitis; J. Vanhellemont


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
283 KB
Volume
154-155
Category
Article
ISSN
0921-5107

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In this study, we present the results of investigation on p-n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77-350 K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequen