✍ Scribed by Hans-Jörg Himmel; Nicole Hebben
No coin nor oath required. For personal study only.
Matrix‐isolation experiments were performed to study the interaction between Ga atoms and N~2~ by using Raman and UV/Vis spectroscopies for detection and analysis. It was revealed that a weak complex is formed, for which resonance Raman spectra were obtained. Several overtones were sighted, allowing a rough estimate of the GaN~2~ fragmentation energy to be made (∼19 kJ mol^−1^). The excitation profile obtained from the spectra at different laser wavelengths agrees with the UV/Vis spectrum and shows that the complex exhibits an electronic transition at around 410 nm. At the Ga atom, this transition can be described as a ^2^S←^2^P or ^2^D←^2^P excitation, which is red‐shifted from its position for free Ga atoms (approximately 340 nm and 270 nm for ^2^S←^2^P and ^2^D←^2^P, respectively) as a result of N~2~ complexation. The effect of complexation involves, therefore, only slight stabilization of the ^2^P ground state but relatively strong stabilization of the excited ^2^S state. Accordingly, for the Ga atom in its excited ^2^S state, the GaN~2~ bond energy can be estimated to be around 79 kJ mol^−1^.
📜 SIMILAR VOLUMES
The kinetics of interaction of Mo20~ § with VO 2+ was studied in HC104 medium at 25 ~ C and ionic strength of 2 M by the stopped-flow technique. Under conditions of excess VO 2 + a reaction mechanism is proposed to account for the observed pseudo-first order kinetics. For the overall process, 1/2 [M
Scheme 1. Reactivity of 1 towards CÀC double and triple bonds.