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Spectroscopic analysis of stress-induced defects in thin silicon oxide films

✍ Scribed by Kenji Komiya; Yasuhisa Omura


Book ID
108411190
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
157 KB
Volume
59
Category
Article
ISSN
0167-9317

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A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 lm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant ga