✦ LIBER ✦

Spectral sensitivity calculations on n+–p and n+–p–p+ silicon solar cells

✍ Scribed by Dhanasekaran, P. C. ;Vaya, P. R. ;Gopalam, B. S. V.

Publisher: John Wiley and Sons
Year: 1984
Tongue: English
Weight: 547 KB
Volume: 83
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210830236

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

On the majority carrier collection in p+

On the majority carrier collection in p+-p-n+ and n+-p-p+ silicon solar cells

✍ S.N. Singh; R.K. Kotnala; G.C. Jain 📂 Article 📅 1984 🏛 Elsevier Science ⚖ 490 KB

High efficiency p+-n-n+ silicon concentr

High efficiency p+-n-n+ silicon concentrator solar cells

✍ R.D. Nasby; C.M. Garner; F.W. Sexton; J.L. Rodriguez; B.H. Rose; H.T. Weaver 📂 Article 📅 1982 🏛 Elsevier Science ⚖ 531 KB

High efficiency, large-area p+-n-n+ sili

High efficiency, large-area p+-n-n+ silicon solar cells

✍ Andrei Silard; Florin Pera; Gabriel Nani 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 432 KB

Indium tin oxide/(n+-p) silicon solar ce

Indium tin oxide/(n+-p) silicon solar cell

✍ A. Chaoui; R. Ardebili; J.C. Manifacier 📂 Article 📅 1985 🏛 Elsevier Science ⚖ 290 KB

The solar cell structure consists of a shallow n+-p junction prepared on a p-type silicon substrate using phosphorus diffusion at a temperature of 800 °C. A conductive layer of indium tin oxide is then deposited by spray pyrolysis. Both polycrystalline and monocrystalline silicon have been used. Th

Investigation of N+-P diffused junction

Investigation of N+-P diffused junction silicon solar cells

✍ Xiumiao Zhang 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 461 KB

Performance of n+-p-p+ silicon solar cel

Performance of n+-p-p+ silicon solar cells fabricated through masked ion implantation

✍ Andrei P. Silard 📂 Article 📅 1985 🏛 Elsevier Science ⚖ 705 KB