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Indium tin oxide/(n+-p) silicon solar cell

โœ Scribed by A. Chaoui; R. Ardebili; J.C. Manifacier

Publisher
Elsevier Science
Year
1985
Weight
290 KB
Volume
14
Category
Article
ISSN
0379-6787

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โœฆ Synopsis

The solar cell structure consists of a shallow n+-p junction prepared on a p-type silicon substrate using phosphorus diffusion at a temperature of 800 ยฐC.

A conductive layer of indium tin oxide is then deposited by spray pyrolysis. Both polycrystalline and monocrystalline silicon have been used. The air mass 1 efficiencies for the monocrystalline and polycrystalline substrates are ~? = 14% and ~ = 12% respectively. The cells have a total area of 4 cm 2 and their stability and reliability is very good.

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