The solar cell structure consists of a shallow n+-p junction prepared on a p-type silicon substrate using phosphorus diffusion at a temperature of 800 ยฐC. A conductive layer of indium tin oxide is then deposited by spray pyrolysis. Both polycrystalline and monocrystalline silicon have been used. Th
โฆ LIBER โฆ
n-(Indium tin oxide)/p-InP solar cells
โ Scribed by L. Gouskov; H. Luquet; J. Esta; C. Gril
- Publisher
- Elsevier Science
- Year
- 1981
- Weight
- 633 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0379-6787
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