๐”– Bobbio Scriptorium
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n-(Indium tin oxide)/p-InP solar cells

โœ Scribed by L. Gouskov; H. Luquet; J. Esta; C. Gril


Publisher
Elsevier Science
Year
1981
Weight
633 KB
Volume
5
Category
Article
ISSN
0379-6787

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The solar cell structure consists of a shallow n+-p junction prepared on a p-type silicon substrate using phosphorus diffusion at a temperature of 800 ยฐC. A conductive layer of indium tin oxide is then deposited by spray pyrolysis. Both polycrystalline and monocrystalline silicon have been used. Th

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