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On the majority carrier collection in p+-p-n+ and n+-p-p+ silicon solar cells

โœ Scribed by S.N. Singh; R.K. Kotnala; G.C. Jain


Publisher
Elsevier Science
Year
1984
Weight
490 KB
Volume
11
Category
Article
ISSN
0379-6787

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๐Ÿ“œ SIMILAR VOLUMES


Indium tin oxide/(n+-p) silicon solar ce
โœ A. Chaoui; R. Ardebili; J.C. Manifacier ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science โš– 290 KB

The solar cell structure consists of a shallow n+-p junction prepared on a p-type silicon substrate using phosphorus diffusion at a temperature of 800 ยฐC. A conductive layer of indium tin oxide is then deposited by spray pyrolysis. Both polycrystalline and monocrystalline silicon have been used. Th