Specific features of etching of the (001) surface of single-crystalline silicon in KOH-based solutions
β Scribed by E. A. Khizhnyak; A. V. Yukhnevich
- Book ID
- 111459339
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 111 KB
- Volume
- 77
- Category
- Article
- ISSN
- 1070-3632
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The etching characteristics of GaN films prepared by several different methods were investigated. The polarity of all the GaN samples was first determined by coaxial impact collision ion scattering spectroscopy (CAICISS). From the relationship between the etching characteristics and the polarity it
Etching silicon tips in potassium hydroxide (KOH) solution has the advantages of simplicity, easy to handle, low-cost and homogeneous etching rate of the (1 0 0) crystal plane. But the opening angle of silicon tips etched in pure KOH solution or KOH solution saturated with isopropyl alcohol (IPA) ad