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Some properties of the ion beam from a source of duoplasmatron type

✍ Scribed by A. Septier; F. Prangere; H. Ismail; G. Gautherin

Publisher
Elsevier Science
Year
1965
Weight
549 KB
Volume
38
Category
Article
ISSN
0029-554X

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Angular and energy dependence of the ion
Angular and energy dependence of the ion beam oxidation of Si using oxygen ions from a duoplasmatron source
✍ Deenapanray, Prakash N. K.; Petravic, Mladen πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 175 KB

Oxygen ions with energy in the range 4-15 keV O' were used to synthesize surface oxide layers by bombarding Si samples at di †erent angles of incidence with respect to the surface normal. High-resolution Rutherford backscattering spectroscopy and channelling were used to determine both the stoichiom