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Some electrical properties of Bi2O3 thin films

✍ Scribed by Dolocan, V.

Publisher
John Wiley and Sons
Year
1978
Tongue
English
Weight
144 KB
Volume
45
Category
Article
ISSN
0031-8965

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Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In