Structural and Electrical Properties of Annealed In–Bi2S3Thin Films

✍ Scribed by R.Suárez Parra; P.J. George; A.E. Jiménez-Gonzalez; L. Baños; P.K. Nair

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 321 KB
• Volume: 138
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.1998.7785

✦ Synopsis

Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In 2 O 3 as observed in the X-ray diffraction patterns of the films. The dark conductivity of the In ؉ bismuth sulfide films nitrogen-annealed at 300°°C attains a value of 600 ؊ 1 cm ؊1 , which is an improvement by more than eight orders of magnitude compared with as-prepared films. This improvement is attributed to amorphous-crystalline transformation and the presence of metallic bismuth and In 2 O 3 in the annealed films. An etching test in 1 M solution of HCl indicates that these films are rather stable in acid medium.