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Electrical behavior of a Bi2O3 thin film planar-type device

✍ Scribed by K Komorita

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
245 KB
Volume
41
Category
Article
ISSN
0042-207X

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Structural and Electrical Properties of
Structural and Electrical Properties of Annealed In–Bi2S3Thin Films
✍ R.SuΓ‘rez Parra; P.J. George; A.E. JimΓ©nez-Gonzalez; L. BaΓ±os; P.K. Nair πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 321 KB

Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In