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Some electrical and optical characteristics of n-Si-p-NiO heterojunctions

✍ Scribed by V. V. Kryachko; M. K. Kutuzov; V. F. Synorov; A. N. Glaznev


Book ID
112427065
Publisher
Springer
Year
1973
Tongue
English
Weight
131 KB
Volume
16
Category
Article
ISSN
1573-9228

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Capacitance-voltage (C V) characteristics and temperature dependence of current density-voltage (J-V) characteristics of as-grown amorphous gallium arsenide (a-GaAs) thin film heterojunctions formed on n-type crystalline silicon (c-Si(n)) have been measured. It has been found that the depletion laye