𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Solubility and point defect-dopant interactions in GaAs—II: Tin-doping

✍ Scribed by D.T.J. Hurle


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
619 KB
Volume
40
Category
Article
ISSN
0022-3697

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Native Point Defects and Nonstoichiometr
✍ A. N. Morozov; V. T. Bublik; O. Yu. Morozova 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 424 KB

The nature of the main electron trap, EL2, in undoped scniiinsulating GaAs crystals have been studied both qualitatively and quantitatively. It has been shown that point tlefects which, most probably, are responsible for the EL2 level are antisite Aso, defwts or ( A s ~-V G ~) coiiiplexes which are