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Solubility and point defect-dopant interactions in GaAs. I. Tellurium doping

✍ Scribed by D.T.J. Hurle


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
126 KB
Volume
29
Category
Article
ISSN
0038-1098

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Defect Structure in Te-doped GaAs single
✍ Prof. Dr. Peter Paufler; Dr. Gerald Wagner; Dipl.-Krist. Katrin Grosse πŸ“‚ Article πŸ“… 1993 πŸ› John Wiley and Sons 🌐 English βš– 523 KB

## Twins and Stacking Faults At temperatures above the brittle-to-ductile transition (490 "C) in Te-doped GaAs three types of predominant defect configurations have been observed after uniaxial compression along a [00 11 direction: (i) twins and stacking faults (500 ..\_ 520 "C), (ii) slip zones o