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Solubility and ionization energy of Cu, and hole mobility in Cu diffused GaAs

โœ Scribed by Y. Furukawa


Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
849 KB
Volume
26
Category
Article
ISSN
0022-3697

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Zinc delta-doped GaAs and pseudomorphic GaAs/In 0.2 Ga 0.8 As heterostructures grown by low-pressure metalorganic chemical vapour deposition have been demonstrated. The influence of delta-doping period and spacer thickness on two-dimensional hole gas concentrations and hole mobility was studied. Fro