✦ LIBER ✦

Solid-state amorphization of a tool steel by high-current-density, low-energy nitrogen ion implantation

✍ Scribed by A.V. Byeli; O.V. Lobodaeva; S.K. Shykh; V.A. Kukareko

Book ID: 113287223
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 332 KB
Volume: 103
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(95)01188-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High current density, low energy, ion im

High current density, low energy, ion implantation of AISI-M2 tool steel for tribological applications

✍ P.J. Wilbur; J.A. Davis; R. Wei; J.J. Vajo; D.L. Williamson 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 671 KB

A study of low energy high dose nitrogen

A study of low energy high dose nitrogen ion implantation in iron – Effect of ion energy and current density

✍ H.K. Sanghera; J.L. Sullivan 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 520 KB

Implantation Profiles of Nitrogen and Ti

Implantation Profiles of Nitrogen and Titanium in a Low Energy Bombarded High Speed Tool Steel

✍ Barbaszewski, T. ;Dabrowski, M. ;Drwiega, M. ;Gawlik, J. ;Lipińska, E. 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 315 KB

Mutant of a Xylanase-producing Strain of

Mutant of a Xylanase-producing Strain ofAspergillus nigerin Solid State Fermentation by Low Energy Ion Implantation

✍ Min Wu; Shi Chang Li; Jian Ming Yao; Ren Rui Pan; Zeng Liang Yu 📂 Article 📅 2005 🏛 Springer 🌐 English ⚖ 290 KB

Amorphization of Si(0 0 1) by

Amorphization of Si(0 0 1) by ultra low energy (0.5–5 keV) ion implantation observed with high-resolution RBS

✍ K Kimura; A Agarwal; H Toyofuku; K Nakajima; H.-J Gossmann 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 153 KB

Solid phase epitaxial regrowth of amorph

Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study

✍ S. Ruffell; I.V. Mitchell; P.J. Simpson 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm À2 up to 1e16 cm À2 , the associa