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Amorphization of Si(0 0 1) by ultra low energy (0.5–5 keV) ion implantation observed with high-resolution RBS

✍ Scribed by K Kimura; A Agarwal; H Toyofuku; K Nakajima; H.-J Gossmann

No coin nor oath required. For personal study only.

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Amorphization of Si(0&#xa0;0&#xa0;1) by ultra low energy (0.5–5 keV) ion implantation observed with high-resolution RBS