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Solid-phase epitaxy. Effects of irradiation, dopant, and pressure

✍ Scribed by Chaki, T. K.


Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
899 KB
Volume
142
Category
Article
ISSN
0031-8965

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Silicon regions amorphized by high dose ion implantation recrystallize under high temperature treatment. Driven by a lower configuration energy of dopant atoms in the amorphized phase than in the crystalline phase, dopant atoms are pushed in the direction of recrystallization during solid phase epit