Ion-beam irradiation effect on solid-phase growth of β-FeSi2
✍ Scribed by Y. Murakami; H. Kido; A. Kenjo; T. Sadoh; T. Yoshitake; M. Miyao
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 122 KB
- Volume
- 16
- Category
- Article
- ISSN
- 1386-9477
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Beta iron disilicide (b-FeSi 2 ) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. b-FeSi 2 film has been obtained by ion beam sputter deposition (IBSD) on Si(1 0 0) substrates that are pre-treated by sputter etching by Ne + . In the prese
Au nanocrystals (NCs) fabricated by ion implantation into thin SiO 2 and annealing were irradiated with 2.3 MeV Sn ions at À180 °C. The NCs were investigated using cross-section transmission electron microscopy (TEM) as a function of irradiation dose. We observe nucleation of new nanocrystals as a c