Silicon regions amorphized by high dose ion implantation recrystallize under high temperature treatment. Driven by a lower configuration energy of dopant atoms in the amorphized phase than in the crystalline phase, dopant atoms are pushed in the direction of recrystallization during solid phase epit
β¦ LIBER β¦
Solid phase epitaxial regrowth phenomena in silicon
β Scribed by J.S. Williams
- Publisher
- Elsevier Science
- Year
- 1983
- Weight
- 822 KB
- Volume
- 209-210
- Category
- Article
- ISSN
- 0167-5087
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