Phosphorus ions were implanted into silicon single crystals at 10 keV under channelling conditions; this was followed by a 40 keV random implantation to obtain tailored emitters for solar cells. The implanted layers were annealed either by using an electron gun especially designed to perform heat tr
โฆ LIBER โฆ
Solar cell emitter design with PV-tailored implantation
โ Scribed by T. Ohrdes; S. Steingrube; H. Wagner; C. Zechner; G. Letay; R. Chen; S.T. Dunham; P.P. Altermatt
- Book ID
- 116425610
- Publisher
- Elsevier
- Year
- 2011
- Weight
- 626 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1876-6102
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