𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Laser-Annealed, Implanted Boron Emitters for B-BSF Silicon Solar Cells

✍ Scribed by B. Paviet-Salomon; J.F. Lerat; A. Lanterne; T. Emeraud; S. Gall; A. Slaoui

Book ID
116427195
Publisher
Elsevier
Year
2012
Weight
439 KB
Volume
27
Category
Article
ISSN
1876-6102

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Laser annealing of plasma implanted boro
Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon
✍ A. Florakis; D. Tsoukalas; I. Zergioti; K. Giannakopoulos; P. Dimitrakis; D.G. P πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 558 KB

This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured

A comparison between excimer laser and t
A comparison between excimer laser and thermal annealing for ion-implanted polycrystalline silicon solar cells
✍ W. Sinke; A. Polman; F.W. Saris πŸ“‚ Article πŸ“… 1987 πŸ› Elsevier Science βš– 412 KB

PolycrystaUine silicon (Wacker-SILSO) solar cells have been made by phosphorus implantation in combination with pulsed excimer laser annealing or thermal annealing. It was found that laser annealing yields cells with a short-circuit current which is 3% -4% higher than that obtained by thermal anneal