Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo
โฆ LIBER โฆ
Size quantization effects in InAs self-assembled quantum dots
โ Scribed by Schmidt, K. H.; Medeiros-Ribeiro, G.; Garcia, J.; Petroff, P. M.
- Book ID
- 121800025
- Publisher
- American Institute of Physics
- Year
- 1997
- Tongue
- English
- Weight
- 287 KB
- Volume
- 70
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.118682
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