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SixGe1−x films and heterojunctions produced by epitaxial crystallization of a-SixGe1−x alloys on GaAs

✍ Scribed by F. Dondeo; P.V. Santos; H. Kostial; P. Krispin; M.A.A. Pudenzi; I. Chambouleyron

No coin nor oath required. For personal study only.

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