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Si/SiGe heterojunction bipolar transistor made by molecular-beam epitaxy

✍ Scribed by Narozny, P.; Dambkes, H.; Kibbel, H.; Kasper, E.

Book ID
114536195
Publisher
IEEE
Year
1989
Tongue
English
Weight
470 KB
Volume
36
Category
Article
ISSN
0018-9383

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## Abstract We demonstrate AlGaN/GaN heterojunction bipolar transistors (HBTs) by ammonia molecular beam epitaxy (NH~3~ MBE). The several benefits offered by NH~3~ MBE for the growth of GaN based vertical electronic devices are discussed. To obtain good ohmic contacts to the base layer, devices wer