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SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

✍ Scribed by Lin, T.-L.; Ksendzov, A.; Dejewski, S.M.; Jones, E.W.; Fathaure, R.W.; Krabach, T.N.; Maserjian, J.

No coin nor oath required. For personal study only.

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