Molecular beam epitaxy grown Si/Si0.87Ge0.13 heterojunction bipolar transistors with ideal I–V characteristics

✍ Scribed by D.J. Gravesteijn; A. Pruijmboom; W.J. Kersten; J.M.L. van Rooij-Mulder; A.H. Reader; J. Slotboom

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 352 KB
• Volume: 222
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(92)90053-e