P-type Sil\_xGe~/Si quantum well infrared photodetectors for thermal imaging applications have been grown by low pressure vapour phase epitaxy for the first time. Good control of periodicity in these pseudomorphic multiple quantum well structures on Si substrates was demonstrated by real-time ellips
✦ LIBER ✦
Si/Si1−xGex/Si-based quantum wells infrared photodetector operating at 1.55 μm
✍ Scribed by N. Sfina; J.-L. Lazzari; M. Said
- Book ID
- 119373166
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 621 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0749-6036
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