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Single Wall Carbon Nanotubes for p-Type Ohmic Contacts to GaN Light-Emitting Diodes

✍ Scribed by Lee, K.; Wu, Z.; Chen, Z.; Ren, F.; Pearton, S. J.; Rinzler, A. G.

Book ID
124157824
Publisher
American Chemical Society
Year
2004
Tongue
English
Weight
120 KB
Volume
4
Category
Article
ISSN
1530-6984

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Electrical characteristics of In/ITO p-t
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✍ Joon-Ho Oh; Kyoung-Kook Kim; Hyun-Gi Hong; Kyeong-Jae Byeon; Heon Lee; Sang-Won πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 573 KB

We have investigated the annealing-induced improved electrical properties of In(10 nm)/ ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75 Γ‚ 10 -3 O cm 2 upon annealing at 650