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Single-electron transistor analyticI–Vmodel for SPICE simulations

✍ Scribed by Xiaohui Wang; Wolfgang Porod

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
142 KB
Volume
28
Category
Article
ISSN
0749-6036

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✦ Synopsis

We present an analytic model for the I -V characteristics of a single-electron transistor, which may be incorporated in a conventional circuit simulator, such as SPICE. Our model takes as its input the physical SET characteristics (capacitances and tunnel resistances, which may be determined experimentally), and it yields I -V curves which are in excellent agreement with the ones obtained from full-scale Monte Carlo simulations.

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Macro-modeling for the compact simulation of single electron transistor using SIMPLORER
✍ M. Troudi; Na. Sghaier; A. Boubaker; A. Souifi; A. Kalboussi 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 249 KB

In this paper we present analog and digital studies of the single electron transistor (SET), in which only one electron at the time is transferred through the circuit. In the first part of this paper, we show numerical simulations of fundamental characteristics of SET using MATLAB. As a second part