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Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator

✍ Scribed by A. Boubaker; M. Troudi; Na. Sghaier; A. Souifi; N. Baboux; A. Kalboussi

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
565 KB
Volume
40
Category
Article
ISSN
0026-2692

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## Abstract The trap states at the front and back oxide interfaces and grain boundaries of polycrystalline silicon thin‐film transistors are evaluated by using electrical characteristic analysis and device simulation. First, the method for extracting the trap densities of the front and back oxide i