Simulation of ultra thin film SOI transistors using a non-local ballistic model for impact ionisation : G. A. Armstrong and W. D. French. Solid-State Electronics, 35(12), 1761 (1992)

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 74 KB
• Volume: 33
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(93)90467-d