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Single dopant diffusion in semiconductor technology

โœ Scribed by A. Glitzky; W. Merz

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
177 KB
Volume
27
Category
Article
ISSN
0170-4214

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โœฆ Synopsis

Abstract

The paper deals with the analysis of pair diffusion models in semiconductor technology. The underlying model contains reactionโ€driftโ€diffusion equations for the mobile point defects and dopantโ€defect pairs as well as reaction equations for immobile dopants which are coupled with a nonโ€linear Poisson equation for the chemical potential of the electrons. For homogeneous structures we present an existence and uniqueness result for strong solutions. Starting with energy estimates we derive further a priori estimates such that fixed point arguments due to Lerayโ€“Schauder guarantee the solvability of the model equations. Copyright ยฉ 2004 John Wiley & Sons, Ltd.

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