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Simultaneous dopant diffusion and surface passivation in a single rapid thermal cycle

✍ Scribed by A. Lachiq; A. Slaoui; L. Georgopoulos; L. Ventura; R. Monna; J. C. Muller


Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
708 KB
Volume
4
Category
Article
ISSN
1062-7995

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✦ Synopsis


In this work, we present results on simultaneous formation of emitterlbacksurface field or emitterlsurface passivation in a single rapid thermal cycle. We have investigated the diyusion kinetics of dopant elements like phosphorus, boron (from a doped spin-on glass (SOD) film), aluminium (from evaporated films) or aluminium-boron (from an Al-B SOD film). In particular, we have shown that rapid thermal co-difusion of P and A1 (or A1-B) leads to low sheet resistances, optical emitter profiles and a high gettering eflect. Furthermore, the possibility of using the remaining SOD films as a surface passivation layer was investigated. Dark saturation current measurements as deduced from the photoconductivity decay technique demonstrate the passivation effect of the remaining SOD film. The highest eficiency of 12.8% obtained was achieved on SOD oxide-coated solar cells.